| Title | Investigation of Fe incorporation in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy |
| Publication Type | Conference Paper |
| Year of Publication | 2019 |
| Authors | Mauze, A., Y. Zhang, T. Mates, and J. Speck |
| Conference Name | 2019 Compound Semiconductor Week (CSW) |
| Date Published | May |
| Keywords | (010) β-Ga2O3 films, doping, Fe incorporation, Ga2O3:Fe, gallium compounds, growth temperatures, iron, molecular beam epitaxial growth, plasma materials processing, plasma-assisted molecular beam epitaxy, semiconductor epitaxial layers, semiconductor growth, surface segregation, surface segregation coefficients, temperature 500.0 degC, temperature 650.0 degC, temperature 700.0 degC, total surface riding concentration, wide band gap semiconductors |
| DOI | 10.1109/ICIPRM.2019.8819314 |
