Publications

Found 1578 results
Author Title Type [ Year(Asc)]
2018
Hahn, W., J-M. Lentali, P. Polovodov, N. Young, J. S. Speck, C. Weisbuch, M. Filoche, F. Maroun, L. Martinelli, Y. Lassailly, et al., "Experimental evidence of nanometer-scale localized recombination due to random In fluctuations in InGaN/GaN quantum wells (Conference Presentation)", Physics and Simulation of Optoelectronic Devices XXVI, vol. 10526: International Society for Optics and Photonics, pp. 105261N, 2018.
Malkowski, T. F., J. S. Speck, S. P. DenBaars, and S. Nakamura, "An exploratory study of acidic ammonothermal growth in a TZM autoclave at high temperatures", Journal of Crystal Growth, vol. 499, pp. 85 - 89, 2018.
Griffiths, S., S. Pimputkar, J. Kearns, T.F. Malkowski, M.F. Doherty, J.S. Speck, and S. Nakamura, "Growth kinetics of basic ammonothermal gallium nitride crystals", Journal of Crystal Growth, vol. 501, pp. 74 - 80, 2018.
Fireman, MN., H. Li, S. Keller, U. K. Mishra, and J. S. Speck, "Growth of N-polar GaN by ammonia molecular beam epitaxy", Journal of Crystal Growth, vol. 481: North-Holland, pp. 65–70, 2018.
Kimmel, A.-C.L., T. F. Malkowski, S. Griffiths, B. Hertweck, T. G. Steigerwald, L. P. Freund, S. Neumeier, M. Göken, J. S. Speck, and E. Schluecker, "High-temperature corrosion of Inconel®Alloy 718, Haynes®282®Alloy and CoWAlloy1&2 in supercritical ammonia/ammonium chloride solution", Journal of Crystal Growth, vol. 498, pp. 289 - 300, 2018.
Myers, D. J., K. Gelžinytė, W. Ying Ho, J. Iveland, L. Martinelli, J. Peretti, C. Weisbuch, and J. S. Speck, "Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes", Journal of Applied Physics, vol. 124, pp. 055703, 2018.
Uždavinys, T. K., D. L. Becerra, M. D. Mensi, R. Ivanov, S. Nakamura, S. P. DenBaars, J. S. Speck, and S. Marcinkevičius, "Impact of alloy composition and well width fluctuations on linewidth broadening and carrier lifetimes in semipolar InGaN quantum wells (Conference Presentation)", Gallium Nitride Materials and Devices XIII, vol. 10532: International Society for Optics and Photonics, pp. 105320P, 2018.
Foronda, H. M., F. Wu, C. Zollner, M. Esmed Alif, B. Saifaddin, A. Almogbel, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers", Journal of Crystal Growth, vol. 483: North-Holland, pp. 134–139, 2018.
Vogt, P., A. Mauze, F. Wu, B. Bonef, and J. S. Speck, "Metal-oxide catalyzed epitaxy (MOCATAXY): the example of the O plasma-assisted molecular beam epitaxy of β-(Al x Ga 1− x ) 2 O 3 /β-Ga 2 O 3 heterostructures", Applied Physics Express, vol. 11, pp. 115503, 2018.
Speck, JS., and JB. Vander Sande, "Microstructural investigation of a melt spun nickel-base superalloy with boron additions.[Ni-11% Cr-5% Al-4% Ti with B additions of 0. 06, 0. 12, and 0. 6%]", TMS (The Metallurgical Society) Paper Selection;(USA), vol. 56, no. CONF-840909–, 2018.
Jiang, R., X. Shen, J. Fang, P. Wang, E. X. Zhang, J. Chen, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, et al., "Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs", IEEE Transactions on Device and Materials Reliability, vol. 18, pp. 364-376, Sept, 2018.
Han, S-H., A. Mauze, E. Ahmadi, T. Mates, Y. Oshima, and J. S. Speck, "n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy", Semiconductor Science and Technology, vol. 33, no. 4: IOP Publishing, pp. 045001, 2018.
Mounir, C., I. L. Koslow, T. Wernicke, M. Kneissl, L. Y. Kuritzky, N. L. Adamski, S. Ho Oh, C. D. Pynn, S. P. DenBaars, S. Nakamura, et al., "On the optical polarization properties of semipolar ( 20 2 ¯ 1 ) and ( 20 2 ¯ 1 ¯) InGaN/GaN quantum wells", Journal of Applied Physics, vol. 123, no. 8: AIP Publishing, pp. 085705, 2018.
Speck, J. S., "Progress in beta-gallium-oxide materials and devices (Conference Presentation)", Oxide-based Materials and Devices IX, vol. 10533: International Society for Optics and Photonics, pp. 1053307, 2018.
Kuritzky, L. Y., C. Weisbuch, and J. S. Speck, "Prospects for 100% wall-plug efficient III-nitride LEDs", Opt. Express, vol. 26, pp. 16600–16608, Jun, 2018.
Alhassan, A. I., E. C. Young, A. Y. Alyamani, A. Albadri, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Reduced-droop green III–nitride light-emitting diodes utilizing GaN tunnel junction", Applied Physics Express, vol. 11, no. 4: IOP Publishing, pp. 042101, 2018.
Borgatti, F., JA. Berger, D. Céolin, J. Sky Zhou, J. J. Kas, M. Guzzo, CF. McConville, F. Offi, G. Panaccione, A. Regoutz, et al., "Revisiting the origin of satellites in core-level photoemission of transparent conducting oxides: The case of n-doped SnO 2", Physical Review B, vol. 97, no. 15: American Physical Society, pp. 155102, 2018.
Khoury, M., H. Li, B. Bonef, L. Y. Kuritzky, A. J. Mughal, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Semipolar GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations", Applied Physics Express, vol. 11, no. 3: IOP Publishing, pp. 036501, 2018.
Lee, C., C. Shen, C. Cozzan, R. M. Farrell, S. Nakamura, A. Y. Alyamani, B. S. Ooi, J. E. Bowers, S. P. DenBaars, and J. S. Speck, "Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems", Gallium Nitride Materials and Devices XIII, vol. 10532: International Society for Optics and Photonics, pp. 105321N, 2018.
Shen, C., T. Khee Ng, C. Lee, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications", Optics express, vol. 26, no. 6: Optical Society of America, pp. A219–A226, 2018.
Peelaers, H., J. B. Varley, J. S. Speck, and C. G. Van de Walle, "Structural and electronic properties of Ga2O3-Al2O3 alloys", Applied Physics Letters, vol. 112, pp. 242101, 2018.
Jr, R. M. Farrell, T. J. Baker, A. Chakraborty, B. A. Haskell, M. P. Pattison, R. Sharma, U. K. Mishra, S. P. DenBaars, J. S. Speck, S. Nakamura, et al., TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga, Al, In, B) N THIN FILMS, HETEROSTRUCTURES, AND DEVICES, 2018.
Chen, H-H., J. S. Speck, C. Weisbuch, and Y-R. Wu, "Three dimensional simulation on the transport and quantum efficiency of UVC-LEDs with random alloy fluctuations", Applied Physics Letters, vol. 113, pp. 153504, 2018.
2017
Megalini, L., B. Cabinian, B. Bonef, H. Zhao, T. Mates, J. Speck, J. Bowers, and J. Klamkin, "1550-nm InGaAsP multi-quantum-well structures in InP nano-ridges by selective MOCVD growth on SOI substrates", Integrated Photonics Research, Silicon and Nanophotonics: Optical Society of America, pp. ITu2A–3, 2017.
Megalini, L., B. Bonef, B. C. Cabinian, H. Zhao, A. Taylor, J. S. Speck, J. E. Bowers, and J. Klamkin, "1550-nm InGaAsP multi-quantum-well structures selectively grown on v-groove-patterned SOI substrates", Applied Physics Letters, vol. 111, no. 3: AIP Publishing, pp. 032105, 2017.

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