Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy

TitleEvidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy
Publication TypeJournal Article
Year of Publication2018
AuthorsHahn, W., J.-M. Lentali, P. Polovodov, N. Young, S. Nakamura, J. S. Speck, C. Weisbuch, M. Filoche, Y.-R. Wu, M. Piccardo, F. Maroun, L. Martinelli, Y. Lassailly, and J. Peretti
JournalPhys. Rev. B
Volume98
Pagination045305
Date PublishedJul
URLhttps://link.aps.org/doi/10.1103/PhysRevB.98.045305
DOI10.1103/PhysRevB.98.045305