Experimental evidence of nanometer-scale localized recombination due to random In fluctuations in InGaN/GaN quantum wells (Conference Presentation)

TitleExperimental evidence of nanometer-scale localized recombination due to random In fluctuations in InGaN/GaN quantum wells (Conference Presentation)
Publication TypeConference Paper
Year of Publication2018
AuthorsHahn, W., J-M. Lentali, P. Polovodov, N. Young, J. S. Speck, C. Weisbuch, M. Filoche, F. Maroun, L. Martinelli, Y. Lassailly, and others
Conference NamePhysics and Simulation of Optoelectronic Devices XXVI
PublisherInternational Society for Optics and Photonics