| Title | Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy |
| Publication Type | Journal Article |
| Year of Publication | 2018 |
| Authors | Farzana, E., E. Ahmadi, J. S. Speck, A. R. Arehart, and S. A. Ringel |
| Journal | Journal of Applied Physics |
| Volume | 123 |
| Pagination | 161410 |