Title | Superlattice hole injection layers for UV LEDs grown on SiC |
Publication Type | Journal Article |
Year of Publication | 2020 |
Authors | Zollner, C. J., A. S. Almogbel, Y. Yao, M. Wang, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura |
Journal | Opt. Mater. Express |
Volume | 10 |
Pagination | 2171–2180 |
Date Published | Sep |
Keywords | Chemical vapor deposition, Light extraction, Quantum efficiency, Silicon carbide, Ultraviolet light emitting diodes, Ultraviolet radiation |
Abstract | AlGaN-based germicidal UV LEDs show promise in fighting the COVID-19 pandemic through disinfection of air, water, and surfaces. We report UV LEDs grown by MOCVD on SiC substrates, fabricated into thin-film flip chip devices. Replacing the uniform p-AlxGa1-xN layer (x $=$ 0.2) with a short-period-superlattice of alternating (x $=$ 0.1 and 0.8) Al-composition improved EQE from 1.3% to 2.7% (3.2% with encapsulation) at 20 A/cm2. Peak EQE and WPE values of 4.8% and 2.8% (287 nm) were measured at current densities below 2 A/cm2, and maximum output power of 7.4 mW (76 mW/mm2) was achieved at 284 nm. Further WPE improvements are expected with both superlattice and uniform layer optimization, improved p-contact metallization, and active region optimization. |
URL | http://www.osapublishing.org/ome/abstract.cfm?URI=ome-10-9-2171 |
DOI | 10.1364/OME.398146 |