Impact of Alloy-Disorder-Induced Localization on Hole Diffusion in Highly Excited c-Plane and m-Plane InGaN Quantum Wells

TitleImpact of Alloy-Disorder-Induced Localization on Hole Diffusion in Highly Excited c-Plane and m-Plane InGaN Quantum Wells
Publication TypeJournal Article
Year of Publication2020
AuthorsAleksiejūnas, R., K. Nomeika, O. Kravcov, S. Nargelas, L. Kuritzky, C. Lynsky, S. Nakamura, C. Weisbuch, and J. S. Speck
JournalPhys. Rev. Applied
Volume14
Pagination054043
Date PublishedNov
URLhttps://link.aps.org/doi/10.1103/PhysRevApplied.14.054043
DOI10.1103/PhysRevApplied.14.054043