Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors

TitleDependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors
Publication TypeJournal Article
Year of Publication2020
AuthorsChow, Y. Chao, C. Lee, M. S. Wong, Y-R. Wu, S. Nakamura, S. P. DenBaars, J. E. Bowers, and J. S. Speck
JournalOpt. Express
Volume28
Pagination23796–23805
Date PublishedAug
KeywordsDiode lasers, Electric fields, Multiple quantum wells, Optical receivers, Quantum wells, Visible light
Abstract

We reported significant improvements in device speed by reducing the quantum barrier (QB) thicknesses in the InGaN/GaN multiple quantum well (MQW) photodetectors (PDs). A 3-dB bandwidth of 700 MHz was achieved with a reverse bias of -6 V. Carrier escape lifetimes due to carrier trapping in the quantum wells (QWs) were obtained from both simulation and experimental fitting, identifying carrier trapping as the major speed limiting factor in the InGaN/GaN MQW PDs.

URLhttp://www.opticsexpress.org/abstract.cfm?URI=oe-28-16-23796
DOI10.1364/OE.399924