Publications

Found 1586 results
Author [ Title(Desc)] Type Year
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 
C
Von Dollen, P., J. S. Speck, and S. Pimputkar, Crystal growth using non-thermal atmospheric pressure plasmas, 2013.
Moe, C. G., Y. Wu, S. Keller, J. S. Speck, S. P. DenBaars, and D. Emerson, "Crystal quality and growth evolution of aluminum nitride on silicon carbide", physica status solidi (a), vol. 203, no. 7: Wiley Online Library, pp. 1708–1711, 2006.
Allemann, JA., Y. Xia, RE. Morriss, AP. Wilkinson, H. Eckert, JS. Speck, CG. Levi, FF. Lange, and S. Anderson, "Crystallization behavior of Li 1–5x Ta 1+ x O 3 glasses synthesized from liquid precursors", Journal of materials research, vol. 11, no. 9: Cambridge University Press, pp. 2376–2387, 1996.
Srikant, V., EJ. Tarsa, DR. Clarke, and JS. Speck, "Crystallographic orientation of epitaxial BaTiO3 films: The role of thermal-expansion mismatch with the substrate", Journal of applied physics, vol. 77, no. 4: AIP, pp. 1517–1522, 1995.
Roder, C., H. Heinke, D. Hommel, TM. Katona, JS. Speck, and SP. DenBaars, "Crystallographic wing tilt in laterally overgrown GaN", Journal of Physics D: Applied Physics, vol. 36, no. 10A: IOP Publishing, pp. A188, 2003.
Thompson, C., A. Munkholm, GB. Stephenson, JA. Eastman, O. Auciello, CM. Foster, P. Fini, SP. DenBaars, and JS. Speck, "Cubic and Hexagonal Fractions in GaN Nucleation Layers Measured Using Grazing Incidence X-Ray Scattering", APS March Meeting Abstracts, 1998.
Hendricks, N. S., A. E. Islam, E. A. Sowers, J. Williams, D. M. Dryden, K. J. Liddy, W. Wang, J. S. Speck, and A. J. Green, "Current transport mechanisms of metal/TiO2/Beta-Ga2O3 diodes", Journal of Applied Physics, vol. 135, issue 9, 2024.
Koehl, WF., MH. Wong, C. Poblenz, B. Swenson, UK. Mishra, JS. Speck, and DD. Awschalom, "Current-induced spin polarization in gallium nitride", Applied Physics Letters, vol. 95, no. 7: AIP, pp. 072110, 2009.
Foronda, H. M., A. E. Romanov, E. C. Young, C. A. Robertson, G. E. Beltz, and J. S. Speck, "Curvature and bow of bulk GaN substrates", Journal of Applied Physics, vol. 120, no. 3: AIP Publishing, pp. 035104, 2016.
Foronda, H. Miguel, A. E. Romanov, E. C. Young, C. A. Robertson, G. E. Beltz, and J. S. Speck, "Curvature of HVPE c-plane grown GaN wafers in the relation to stress gradients caused by inclined threading dislocations", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–1, 2016.
D
Farzana, E., E. Ahmadi, J. S. Speck, A. R. Arehart, and S. A. Ringel, "Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 123, no. 16: AIP Publishing, pp. 161410, 2018.
Arehart, AR., A. Corrion, C. Poblenz, JS. Speck, UK. Mishra, and SA. Ringel, "Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy", Applied Physics Letters, vol. 93, no. 11: AIP, pp. 112101, 2008.
Hierro, A., D. Kwon, SA. Ringel, M. Hansen, UK. Mishra, SP. DenBaars, and JS. Speck, "Deep levels in n-type Schottky and p+-n homojunction GaN diodes", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 922–928, 2000.
Zhang, Z., C. Hurni, A. Arehart, J. Speck, and S. Ringel, "Deep Traps in M-Plane GaN Grown by Ammonia MBE", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Zhang, Z., CA. Hurni, AR. Arehart, J. Yang, RC. Myers, JS. Speck, and SA. Ringel, "Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy", Applied Physics Letters, vol. 100, no. 5: AIP, pp. 052114, 2012.
Shen, L., Y. Pei, L. McCarthy, C. Poblenz, A. Corrion, N. Fichtenbaum, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Deep-recessed GaN HEMTs using selective etch technology exhibiting high microwave performance without surface passivation", Microwave Symposium, 2007. IEEE/MTT-S International: IEEE, pp. 623–626, 2007.
Zhao, L., AT. Chien, FF. Lange, and JS. Speck, "Defect Generation And Evolution In The Hydrothermal Growth Of Epitaxial BaTiO 3 Thin Films", MRS Online Proceedings Library Archive, vol. 474: Cambridge University Press, 1997.
Haskell, BA., TJ. Baker, MB. McLaurin, F. Wu, PT. Fini, SP. DenBaars, JS. Speck, and S. Nakamura, "Defect reduction in (1 1\= 00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy", Applied Physics Letters, vol. 86, no. 11: AIP, pp. 111917, 2005.
Haskell, BA., F. Wu, MD. Craven, S. Matsuda, PT. Fini, T. Fujii, K. Fujito, SP. DenBaars, JS. Speck, and S. Nakamura, "Defect reduction in (1120) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy", Applied physics letters, vol. 83, no. 4: AIP, pp. 644–646, 2003.
Chakraborty, A., KC. Kim, F. Wu, JS. Speck, SP. DenBaars, and UK. Mishra, "Defect reduction in nonpolar a-plane GaN films using in situ Si N x nanomask", Applied physics letters, vol. 89, no. 4: AIP, pp. 041903, 2006.
DenBaars, S. P., and J. S. Speck, Defect reduction in the growth of group III nitrides, 1997.
Imer, B. M., J. S. Speck, and S. P. DenBaars, Defect reduction of non-polar and semi-polar III-Nitrides with sidewall lateral epitaxial overgrowth (SLEO), 2008.
Imer, B. M., J. S. Speck, and S. P. DenBaars, Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO), 2011.
Wu, XH., LM. Brown, D. Kapolnek, S. Keller, B. Keller, SP. DenBaars, and JS. Speck, "Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3", Journal of applied physics, vol. 80, no. 6: AIP, pp. 3228–3237, 1996.
Wu, X. H., L. M. Brown, D. Kapolnek, S. Keller, B. Keller, S. DenBaars, and J. Speck, "Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3", Journal of Applied Physics, vol. 80, pp. 3228 - 3237, 10, 1996.

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