Curvature of HVPE c-plane grown GaN wafers in the relation to stress gradients caused by inclined threading dislocations

TitleCurvature of HVPE c-plane grown GaN wafers in the relation to stress gradients caused by inclined threading dislocations
Publication TypeConference Paper
Year of Publication2016
AuthorsForonda, H. Miguel, A. E. Romanov, E. C. Young, C. A. Robertson, G. E. Beltz, and J. S. Speck
Conference NameCompound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016
PublisherIEEE