| Title | Defect reduction in (1120) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy |
| Publication Type | Journal Article |
| Year of Publication | 2003 |
| Authors | Haskell, BA., F. Wu, MD. Craven, S. Matsuda, PT. Fini, T. Fujii, K. Fujito, SP. DenBaars, JS. Speck, and S. Nakamura |
| Journal | Applied physics letters |
| Volume | 83 |
| Pagination | 644–646 |