Defect reduction in (1 1\= 00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy

TitleDefect reduction in (1 1\= 00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy
Publication TypeJournal Article
Year of Publication2005
AuthorsHaskell, BA., TJ. Baker, MB. McLaurin, F. Wu, PT. Fini, SP. DenBaars, JS. Speck, and S. Nakamura
JournalApplied Physics Letters
Volume86
Pagination111917