Deep-recessed GaN HEMTs using selective etch technology exhibiting high microwave performance without surface passivation

TitleDeep-recessed GaN HEMTs using selective etch technology exhibiting high microwave performance without surface passivation
Publication TypeConference Paper
Year of Publication2007
AuthorsShen, L., Y. Pei, L. McCarthy, C. Poblenz, A. Corrion, N. Fichtenbaum, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra
Conference NameMicrowave Symposium, 2007. IEEE/MTT-S International
PublisherIEEE