Publications

Found 1586 results
Author Title Type [ Year(Asc)]
2011
Wong, MH., DF. Brown, ML. Schuette, H. Kim, V. Balasubramanian, W. Lu, JS. Speck, and UK. Mishra, "Erratum for ëX-band power performance of N-face GaN MIS-HEMTsí", Electronics Letters, vol. 47, no. 6: IET Digital Library, pp. 416–416, 2011.
Dasgupta, S., A. Raman, J. S. Speck, U. K. Mishra, and others, "Experimental demonstration of III-nitride hot-electron transistor with GaN base", IEEE Electron Device Letters, vol. 32, no. 9: IEEE, pp. 1212–1214, 2011.
Hu, Y-L., S. Kraemer, P. T. Fini, and J. S. Speck, "Extended defect structure of a-plane GaN produced by sidewall lateral epitaxial overgrowth", Journal of Crystal Growth, vol. 331, no. 1: Elsevier, pp. 49–55, 2011.
Kamber, D. S., S. Pimputkar, M. Saito, S. P. DenBaars, J. S. Speck, and S. Nakamura, Group-iii nitride monocrystal with improved purity and method of producing the same, 2011.
Keller, S., Y. Dora, S. Chowdhury, F. Wu, X. Chen, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon", physica status solidi (c), vol. 8, no. 7-8: Wiley Online Library, pp. 2086–2088, 2011.
Haskell, B. A., M. B. McLaurin, S. P. DenBaars, J. Stephen Speck, and S. Nakamura, Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy, jun # " 7", 2011.
Haskell, B. A., M. B. McLaurin, S. P. DenBaars, J. Stephen Speck, and S. Nakamura, Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy, 2011.
Haskell, B. A., M. D. Craven, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura, Growth of reduced dislocation density non-polar gallium nitride, 2011.
Dasgupta, S., S. Choi, F. Wu, J. S. Speck, U. K. Mishra, and others, "Growth, structural, and electrical characterizations of N-polar InAlN by plasma-assisted molecular beam epitaxy", Applied physics express, vol. 4, no. 4: IOP Publishing, pp. 045502, 2011.
Chung, R. B., F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Growth study and impurity characterization of AlxIn1- xN grown by metal organic chemical vapor deposition", Journal of Crystal Growth, vol. 324, no. 1: North-Holland, pp. 163–167, 2011.
Bierwagen, O., S. Choi, and J. S. Speck, "Hall and Seebeck profiling: Determining surface, interface, and bulk electron transport properties in unintentionally doped InN", Physical Review B, vol. 84, no. 23: APS, pp. 235302, 2011.
DenBaars, S. P., S. Nakamura, and J. S. Speck, High efficiency light emitting diode (LED), jun # " 7", 2011.
Lang, J., C. Neufeld, C. Hurni, S. Cruz, E. Matioli, U. Mishra, and J. Speck, "High External Quantum Efficiency and Fill-Factor InGaN-Based Solar Cells Grown by NH (3)-MBE", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Lang, J. R., CJ. Neufeld, CA. Hurni, SC. Cruz, E. Matioli, UK. Mishra, and JS. Speck, "High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH 3-based molecular beam epitaxy", Applied Physics Letters, vol. 98, no. 13: AIP, pp. 131115, 2011.
Matioli, E., C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, et al., "High internal and external quantum efficiency InGaN/GaN solar cells", Applied Physics Letters, vol. 98, no. 2: AIP, pp. 021102, 2011.
Zhao, Y., S. Tanaka, Q. Yan, C-Y. Huang, R. B. Chung, C-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, et al., "High optical polarization ratio from semipolar (20 2\= 1\=) blue-green InGaN/GaN light-emitting diodes", Applied physics letters, vol. 99, no. 5: AIP, pp. 051109, 2011.
Farrell, R. M., C. J. Neufeld, S. C. Cruz, J. R. Lang, M. Iza, S. Keller, S. Nakamura, SP. DenBaars, UK. Mishra, and JS. Speck, "High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm", Applied Physics Letters, vol. 98, no. 20: AIP, pp. 201107, 2011.
Zhao, Y., S. Tanaka, R. Chung, C-C. Pan, K. Fujito, D. Feezell, J. Speck, S. DenBaars, and S. Nakamura, "Highly Polarized Spontaneous Emission from Semipolar(20-2-1) InGaN/GaN Light-Emitting Diodes", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Wang, Q. Jie, C. Yan, N. Yu, C. Pflügl, L. Diehl, F. Capasso, J. Unterhinninghofen, J. Wiersig, T. Edamura, and M. Yamanishi, "Highly unidirectional whispering gallery mode lasers", Conference on Lasers and Electro-Optics/Pacific Rim: Optical Society of America, pp. J143, 2011.
Raring, J. W., M. C. Schmidt, C. Poblenz, B. Li, Y-C. Chang, M. J. Mondry, Y-. Da Lin, M. R. Krames, R. Craig, J. S. Speck, et al., "High-performance blue and green laser diodes based on nonpolar/semipolar bulk GaN substrates", Gallium Nitride Materials and Devices Vi, vol. 7939: International Society for Optics and Photonics, pp. 79390Y, 2011.
Schmidt, M. C., C. Poblenz, Y-C. Chang, B. Li, M. J. Mondry, J. Iveland, M. R. Krames, R. Craig, J. W. Raring, J. S. Speck, et al., "High-performance blue and green laser diodes based on nonpolar/semipolar GaN substrates", Laser Technology for Defense and Security VII, vol. 8039: International Society for Optics and Photonics, pp. 80390D, 2011.
Farrell, RM., DA. Haeger, PS. Hsu, MC. Schmidt, K. Fujito, DF. Feezell, SP. DenBaars, JS. Speck, and S. Nakamura, "High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes", Applied Physics Letters, vol. 99, no. 17: AIP, pp. 171113, 2011.
Zhao, Y., S. Tanaka, C-C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High-power blue-violet semipolar (2021) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2", Applied physics express, vol. 4, no. 8: IOP Publishing, pp. 082104, 2011.
Rangel, E., E. Matioli, J. S. Speck, C. Weisbuch, and E. Hu, "Impact of the vertical layer structure on the emission directionality of thin-film InGaN photonic crystal LEDs", CLEO: Science and Innovations: Optical Society of America, pp. CMA3, 2011.
Huang, C-Y., Q. Yan, Y. Zhao, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Influence of Mg-doped barriers on semipolar (20 2\= 1) multiple-quantum-well green light-emitting diodes", Applied Physics Letters, vol. 99, no. 14: AIP, pp. 141114, 2011.

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