| Title | Extended defect structure of a-plane GaN produced by sidewall lateral epitaxial overgrowth |
| Publication Type | Journal Article |
| Year of Publication | 2011 |
| Authors | Hu, Y-L., S. Kraemer, P. T. Fini, and J. S. Speck |
| Journal | Journal of Crystal Growth |
| Volume | 331 |
| Pagination | 49–55 |