Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon

TitleGrowth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon
Publication TypeJournal Article
Year of Publication2011
AuthorsKeller, S., Y. Dora, S. Chowdhury, F. Wu, X. Chen, S. P. DenBaars, J. S. Speck, and U. K. Mishra
Journalphysica status solidi (c)
Volume8
Pagination2086–2088