| Title | Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors with+ 3 V of threshold voltage using Al2O3 deposited by atomic layer deposition |
| Publication Type | Journal Article |
| Year of Publication | 2011 |
| Authors | Fujiwara, T., R. Yeluri, D. Denninghoff, J. Lu, S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra |
| Journal | Applied physics express |
| Volume | 4 |
| Pagination | 096501 |