Publications

Found 15 results
Author Title Type [ Year(Asc)]
Filters: Author is Lu, Jing  [Clear All Filters]
2015
Yeluri, R., J. Lu, C. A. Hurni, D. A. Browne, S. Chowdhury, S. Keller, J. S. Speck, and U. K. Mishra, "Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction", Applied Physics Letters, vol. 106, no. 18: AIP Publishing, pp. 183502, 2015.
2014
Yeluri, R., J. Lu, D. Browne, C. A. Hurni, S. Chowdhury, S. Keller, J. S. Speck, and U. K. Mishra, "Low ON-resistance and high current GaN vertical electron transistors with buried p-GaN layers", Device Research Conference (DRC), 2014 72nd Annual: IEEE, pp. 253–254, 2014.
Keller, S., H. Li, M. Laurent, Y. Hu, N. Pfaff, J. Lu, D. F. Brown, N. A. Fichtenbaum, J. S. Speck, S. P. DenBaars, et al., "Recent progress in metal-organic chemical vapor deposition of N-polar group-III nitrides", Semiconductor Science and Technology, vol. 29, no. 11: IOP Publishing, pp. 113001, 2014.
2013
Mazumder, B., S. W. Kaun, J. Lu, S. Keller, U. K. Mishra, and J. S. Speck, "Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures", Applied Physics Letters, vol. 102, no. 11: AIP, pp. 111603, 2013.
Mazumder, B., S. W. Kaun, J. Lu, S. Keller, U. K. Mishra, and J. S. Speck, "Atom probe characterization of an AlN interlayer within HEMT structures grown by molecular beam epitaxy and metal-organic chemical vapor deposition", Bulletin of the American Physical Society, vol. 58: American Physical Society, 2013.
Dasgupta, S., J. Lu, A. Raman, C. Hurni, G. Gupta, J. S. Speck, U. K. Mishra, and others, "Estimation of hot electron relaxation time in gan using hot electron transistors", Applied Physics Express, vol. 6, no. 3: IOP Publishing, pp. 034002, 2013.
Wong, M. Hoi, S. Keller, S. Dasgupta Nidhi, D. J. Denninghoff, S. Kolluri, D. F. Brown, J. Lu, N. A. Fichtenbaum, E. Ahmadi, U. Singisetti, et al., "N-polar GaN epitaxy and high electron mobility transistors", Semiconductor Science and Technology, vol. 28, no. 7: IOP Publishing, pp. 074009, 2013.
2012
Wong, M. Hoi, U. Singisetti, J. Lu, J. S. Speck, and U. K. Mishra, "Anomalous output conductance in N-polar GaN high electron mobility transistors", IEEE Transactions on Electron Devices, vol. 59, no. 11: IEEE, pp. 2988–2995, 2012.
Lu, J., Y-L. Hu, D. F. Brown, F. Wu, S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Charge and Mobility Enhancements in In-Polar InAl (Ga) N/Al (Ga) N/GaN Heterojunctions Grown by Metal–Organic Chemical Vapor Deposition Using a Graded Growth Strategy", Japanese Journal of Applied Physics, vol. 51, no. 11R: IOP Publishing, pp. 115502, 2012.
Keller, S., J. Lu, U. K. Mishra, S. P. DenBaars, and J. S. Speck, "Effect of indium on the conductivity of poly-crystalline GaN grown on high purity fused silica", physica status solidi (a), vol. 209, no. 3: WILEY-VCH Verlag Berlin, pp. 431–433, 2012.
Dasgupta, S., J. Lu, J. S. Speck, U. K. Mishra, and others, "Scaled self-aligned N-polar GaN/AlGaN MIS-HEMTs with $ f_ ${$T$}$ $ of 275 GHz", IEEE Electron Device Letters, vol. 33, no. 7: IEEE, pp. 961–963, 2012.
Dasgupta, S., J. Lu, J. S. Speck, U. K. Mishra, and others, "Self-aligned N-polar GaN/InAlN MIS-HEMTs with record extrinsic transconductance of 1105 mS/mm", IEEE Electron Device Letters, vol. 33, no. 6: IEEE, pp. 794–796, 2012.
2011
Wong, M. Hoi, U. Singisetti, J. Lu, J. S. Speck, and U. K. Mishra, "Anomalous output conductance in N-polar GaN-based MIS-HEMTs", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 211–212, 2011.
Fujiwara, T., R. Yeluri, D. Denninghoff, J. Lu, S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors with+ 3 V of threshold voltage using Al2O3 deposited by atomic layer deposition", Applied physics express, vol. 4, no. 9: IOP Publishing, pp. 096501, 2011.
Denninghoff, D., S. Dasgupta, J. Lu, D. Brown, S. Keller, J. Speck, and U. Mishra, "N-Polar GaN HEMTs Grown by MBE and MOCVD with fmax of 255 and 250 GHz, Respectively", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.