| Title | Self-aligned N-polar GaN/InAlN MIS-HEMTs with record extrinsic transconductance of 1105 mS/mm |
| Publication Type | Journal Article |
| Year of Publication | 2012 |
| Authors | Dasgupta, S., J. Lu, J. S. Speck, U. K. Mishra, and others |
| Journal | IEEE Electron Device Letters |
| Volume | 33 |
| Pagination | 794–796 |