| Title | N-Polar GaN HEMTs Grown by MBE and MOCVD with fmax of 255 and 250 GHz, Respectively |
| Publication Type | Journal Article |
| Year of Publication | 2011 |
| Authors | Denninghoff, D., S. Dasgupta, J. Lu, D. Brown, S. Keller, J. Speck, and U. Mishra |
| Journal | Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun |