N-polar GaN epitaxy and high electron mobility transistors

TitleN-polar GaN epitaxy and high electron mobility transistors
Publication TypeJournal Article
Year of Publication2013
AuthorsWong, M. Hoi, S. Keller, S. Dasgupta Nidhi, D. J. Denninghoff, S. Kolluri, D. F. Brown, J. Lu, N. A. Fichtenbaum, E. Ahmadi, U. Singisetti, and others
JournalSemiconductor Science and Technology
Volume28
Pagination074009