| Title | Experimental demonstration of III-nitride hot-electron transistor with GaN base |
| Publication Type | Journal Article |
| Year of Publication | 2011 |
| Authors | Dasgupta, S., A. Raman, J. S. Speck, U. K. Mishra, and others |
| Journal | IEEE Electron Device Letters |
| Volume | 32 |
| Pagination | 1212–1214 |