Direct Correlation between EC-0. 57 eV Trap Generation and Field-Induced Degradation in AlGaN/GaN High Electron Mobility Transistors

TitleDirect Correlation between EC-0. 57 eV Trap Generation and Field-Induced Degradation in AlGaN/GaN High Electron Mobility Transistors
Publication TypeJournal Article
Year of Publication2011
AuthorsSasikumar, A., A. Arehart, S. Kaun, M. Hoi Wong, J. Speck, U. Mishra, and S. Ringe
JournalMinerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun