| Title | Enhancement-mode N-polar GaN MISFETs with self-aligned source/drain regrowth |
| Publication Type | Journal Article |
| Year of Publication | 2011 |
| Authors | Singisetti, U., M. Hoi Wong, S. Dasgupta, B. Swenson, B. J. Thibeault, J. S. Speck, U. K. Mishra, and others |
| Journal | IEEE Electron Device Letters |
| Volume | 32 |
| Pagination | 137–139 |