| Title | Effects of threading dislocation density on the gate leakage of AlGaN/GaN heterostructures for high electron mobility transistors |
| Publication Type | Journal Article |
| Year of Publication | 2011 |
| Authors | Kaun, S. W., M. Hoi Wong, S. Dasgupta, S. Choi, R. Chung, U. K. Mishra, and J. S. Speck |
| Journal | Applied physics express |
| Volume | 4 |
| Pagination | 024101 |