| Title | Enhancement-mode N-polar GaN metal–insulator–semiconductor field effect transistors with current gain cutoff frequency of 120 GHz |
| Publication Type | Journal Article |
| Year of Publication | 2011 |
| Authors | Singisetti, U., M. Hoi Wong, S. Dasgupta, J. S. Speck, and U. K. Mishra |
| Journal | Applied physics express |
| Volume | 4 |
| Pagination | 024103 |