| Title | Device physics-024101 Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors |
| Publication Type | Journal Article |
| Year of Publication | 2011 |
| Authors | Kaun, S. W., M. Hoi Wong, S. Dasgupta, S. Choi, R. Chung, U. K. Mishra, and J. S. Speck |
| Journal | Applied Physics Express |
| Volume | 4 |