Publications

Found 1586 results
Author Title Type [ Year(Desc)]
2019
Hamdy, K. W., E. C. Young, A. I. Alhassan, D. L. Becerra, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes", Opt. Express, vol. 27, pp. 8327–8334, Mar, 2019.
Sayed, I., B. Bonef, W. Liu, S. Chan, J. Georgieva, J. S. Speck, S. Keller, and U. K. Mishra, "Electrical properties and interface abruptness of AlSiO gate dielectric grown on 0001 ¯ N-polar and (0001) Ga-polar GaN", Applied Physics Letters, vol. 115, pp. 172104, 2019.
Espenlaub, A. C., D. J. Myers, E. C. Young, S. Marcinkevičius, C. Weisbuch, and J. S. Speck, "Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs", Journal of Applied Physics, vol. 126, pp. 184502, 2019.
SaifAddin, B. K., A. Almogbel, C. J. Zollner, H. Foronda, A. Alyamani, A. Albadri, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC", Semiconductor Science and Technology, vol. 34, pp. 035007, 01/2019.
Lheureux, G., S. Mehari, D. Cohen, P. Chan, H. Zhang, K. Hamdy, C. Reilly, R. Anderson, E. Zeitz, R. Seshadri, et al., "GaN High-Power Lasers for solid-state lighting", OSA Advanced Photonics Congress (AP) 2019 (IPR, Networks, NOMA, SPPCom, PVLED): Optical Society of America, 2019.
Fireman, M. N., G. L'Heureux, F. Wu, T. Mates, E. C. Young, and J. S. Speck, "High germanium doping of GaN films by ammonia molecular beam epitaxy", Journal of Crystal Growth, vol. 508, pp. 19 - 23, 2019.
Wang, J., E. Young, B. SaifAddin, C. Zollner, A. Almogbel, M. Fireman, M. Izza, S. Nakamura, S. Denbaars, and J. Speck, "Hybrid III-Nitride Tunnel Junctions for Low Excess Voltage Blue LEDs and UVC LEDs", 2019 Compound Semiconductor Week (CSW), May, 2019.
Marcinkevičius, S., R. Yapparov, L. Y. Kuritzky, S. Nakamura, and J. S. Speck, "Impact of Barrier Height on the Interwell Carrier Transport in InGaN/(In)GaN Multiple Quantum Wells", Laser Congress 2019 (ASSL, LAC, LS&C): Optical Society of America, 2019.
Saifaddin, B. K., M. Iza, H. Foronda, A. Almogbel, C. J. Zollner, F. Wu, A. Alyamani, A. Albadri, S. Nakamura, S. P. DenBaars, et al., "Impact of roughening density on the light extraction efficiency of thin-film flip-chip ultraviolet LEDs grown on SiC", Opt. Express, vol. 27, pp. A1074–A1083, Aug, 2019.
Farzana, E., A. Mauze, J. B. Varley, T. E. Blue, J. S. Speck, A. R. Arehart, and S. A. Ringel, "Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy", APL Materials, vol. 7, pp. 121102, 2019.
Mauze, A., Y. Zhang, T. Mates, and J. Speck, "Investigation of Fe incorporation in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy", 2019 Compound Semiconductor Week (CSW), May, 2019.
Alreesh, M. Abo, P. Von Dollen, T. F. Malkowski, T. Mates, H. Albrithen, S. DenBaars, S. Nakamura, and J. S. Speck, "Investigation of oxygen and other impurities and their effect on the transparency of a Na flux grown GaN crystal", Journal of Crystal Growth, vol. 508, pp. 50 - 57, 2019.
Chmielewski, A., P. Moradifar, L. Miao, K. A. Lopez, Y. Zhang, A. Mauze, J. S. Speck, and N. Alem, "Investigation of the Atomic and Electronic Structure of β-(Al0.2Ga0.8)2O3 Alloys by STEM-EELS", Microscopy and Microanalysis, vol. 25, pp. 2186–2187, 2019.
Mauze, A., Y. Zhang, T. Mates, F. Wu, and J. S. Speck, "Investigation of unintentional Fe incorporation in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 115, pp. 052102, 2019.
Jorgensen, K. F., and J. S. Speck, "InxGa1-xN Alloys Grown by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) with Growth Rates Up to 1.3 μm/hr", 2019 Compound Semiconductor Week (CSW), May, 2019.
Alema, F., Y. Zhang, A. Osinsky, N. Valente, A. Mauze, T. Itoh, and J. S. Speck, "Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3", APL Materials, vol. 7, pp. 121110, 2019.
Zhang, Y., F. Alema, A. Mauze, O. S. Koksaldi, R. Miller, A. Osinsky, and J. S. Speck, "MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature", APL Materials, vol. 7, pp. 022506, 2019.
Robertson, C. A., K. S. Qwah, Y.-R. Wu, and J. S. Speck, "Modeling dislocation-related leakage currents in GaN p-n diodes", Journal of Applied Physics, vol. 126, pp. 245705, 2019.
Asahi, H., and Y. Horikoshi, "Molecular Beam Epitaxy: Materials and Device Applications", Wiley Series in Materials for Electronic & Optoelectronic Applications: Wiley, 2019.
Bonef, B., S. D. Harrington, D. J. Pennachio, J. S. Speck, and C. J. Palmstrøm, "Nanometer scale structural and compositional inhomogeneities of half-Heusler CoTi1-xFexSb thin films", Journal of Applied Physics, vol. 125, pp. 205301, 2019.
Zhang, Y., A. Mauze, F. Alema, A. Osinsky, and J. S. Speck, "Near unity ideality factor for sidewall Schottky contacts on un-intentionally doped $\upbeta$-Ga2O3", Applied Physics Express, vol. 12, pp. 044005, mar, 2019.
Kudrawiec, R., L. Janicki, W. M. Linhart, M. A. Mayer, I. D. Sharp, S. Choi, O. Bierwagen, J. S. Speck, and W. Walukiewicz, "Photoreflectance and photoinduced microwave reflectance studies of surface band bending in Mg-doped InN", Journal of Applied Physics, vol. 126, pp. 045712, 2019.
Baj, M., L. H. Dmowski, A. Kwiatkowski, J. Przybytek, X. Wang, G. Koblmüller, C. S. Gallinat, and J. S. Speck, "Puzzle of non-surface related 2D electron gas in n-InN epitaxial samples", Journal of Applied Physics, vol. 126, pp. 045705, 2019.
Kamikawa, T., S. Gandrothula, M. Araki, H. Li, V. Bonito Oliva, F. Wu, D. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate", Opt. Express, vol. 27, pp. 24717–24723, Aug, 2019.
Almogbel, A., B. SaifAddin, C. Zollner, M. Iza, H. Albrithen, A. Alyamani, A. Albadri, S. Nakamura, S. Denbaars, and J. Speck, "Recent progress in AlGaN UV-C LEDs grown on SiC", 2019 Compound Semiconductor Week (CSW), May, 2019.

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