| Title | Impact of Barrier Height on the Interwell Carrier Transport in InGaN/(In)GaN Multiple Quantum Wells |
| Publication Type | Conference Paper |
| Year of Publication | 2019 |
| Authors | Marcinkevičius, S., R. Yapparov, L. Y. Kuritzky, S. Nakamura, and J. S. Speck |
| Conference Name | Laser Congress 2019 (ASSL, LAC, LS&C) |
| Publisher | Optical Society of America |
| Keywords | Diode lasers, Electric fields, Indium gallium nitride, light emitting diodes, Multiple quantum wells, Quantum wells |
| Abstract | Interwell carrier transport, important for efficient LED and laser diode operation, was studied in InGaN multiple quantum wells by time-resolved photoluminescence. A strong increase in transport efficiency was achieved in structures in which GaN barriers were replaced with that of InGaN. |
| URL | http://www.osapublishing.org/abstract.cfm?URI=LSC-2019-JW2A.27 |