Publications

Found 74 results
Author Title Type [ Year(Desc)]
Filters: Author is James S. Speck  [Clear All Filters]
2021
Farzana, E., F. Alema, W. Ying Ho, A. Mauze, T. Itoh, A. Osinsky, and J. S. Speck, "Vertical β-Ga2O3 Schottky diodes from metal-organic chemical vapor deposition with low on-resistance and high average breakdown field", Oxide-based Materials and Devices XII: International Society for Optics and Photonics, 2021.
2022
Hamdy, S. W., S. P. DenBaars, J. S. Speck, and S. Nakamura, "Designs for III-nitride edge-emitting laser diodes with tunnel junction contacts for low internal optical absorption loss", Optical Engineering, vol. 61, pp. 027102, 2022.
Yapparov, R., C. Lynsky, Y. Chao Chow, S. Nakamura, S. P. DenBaars, J. S. Speck, and S. Marcinkevičius, "Engineering of quantum barriers for efficient InGaN quantum well LEDs", Optica Advanced Photonics Congress 2022: Optica Publishing Group, 2022.
Alema, F., T. Itoh, S. Vogt, J. S. Speck, and A. Osinsky, "Highly conductive epitaxial β-Ga2O3 and β-(AlxGa1−x)2O3 films by MOCVD", Japanese Journal of Applied Physics, vol. 61, pp. 100903, sep, 2022.
Yao, Y., H. Li, P. Li, C. J. Zollner, M. Wang, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Size dependent characteristics of AlGaN-based deep ultraviolet micro-light-emitting-diodes", Applied Physics Express, vol. 15, pp. 064003, may, 2022.
Marcinkevičius, S., and J. S. Speck, "Ultrafast carrier dynamics in β-Ga2O3", Oxide-based Materials and Devices XIII: International Society for Optics and Photonics, 2022.
2023
Ewing, J., C. Lynsky, F. Wu, M. Wong, M. Iza, J. S. Speck, and S. P. DenBaars, "6.5% external quantum efficiency in V-defect engineered red InGaN LEDs", Gallium Nitride Materials and Devices XVIII: International Society for Optics and Photonics, 2023.
Alema, F., T. Itoh, W. Brand, A. Osinsky, and J. S. Speck, "Controllable nitrogen doping of MOCVD Ga2O3 using NH3", Applied Physics Letters, vol. 122, 2023.
Wang, M., S. Mu, J. S. Speck, and C. G. Van de Walle, "First-Principles Study of Twin Boundaries and Stacking Faults in Beta-Ga2O3", Advanced Materials Interfaces, 2023.
Li, P., H. Li, Y. Yao, K. Shek Qwah, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Hybrid tunnel junction enabled independent junction control of cascaded InGaN blue/green micro-light-emitting diodes", Opt. Express, vol. 31, pp. 7572–7578, Feb, 2023.
Ho, W. Ying, Y. Chao Chow, S. Nakamura, J. Peretti, C. Weisbuch, and J. S. Speck, "Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES)", Applied Physics Letters, vol. 122, 2023.
Alema, F., T. Itoh, W. Brand, M. Tadjer, A. Osinsky, and J. S. Speck, "N2O grown high Al composition nitrogen doped Beta-(AlGa)2O3/Beta-Ga2O3 using MOCVD", Journal of Vacuum Science and Technology A, vol. 41, issue 4, 2023.
Wong, M. S., H. Zhang, E. S. Trageser, R. M. Anderson, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Narrow ridge III-nitride m-plane violet edge-emitting laser diodes with sidewall passivation using atomic layer deposition", Gallium Nitride Materials and Devices XVIII: International Society for Optics and Photonics, 2023.
Wong, M. S., R. C. White, S. Gee, T. Tak, S. Gandrothula, H. Choi, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Recovering the efficiency of AlGaInP red micro-LEDs using sidewall treatments", Applied Physics Express, vol. 16, issue 6, 2023.
Islam, S., A. S. Senarath, A. Sengupta, E. Xia Zhang, D. R. Ball, D. M. Fleetwood, R. D. Schrimpf, E. Farzana, A. Bhattacharyya, N. S. Hendricks, et al., "Single-Event Burnout by Cf-252 Irradiation in Vertical Beta-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate", Device Research Conference (DRC), pp. 1-2, 2023.
Wu, F., J. Ewing, C. Lynsky, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Structure of V-defects in long wavelength GaN-based light emitting diodes", Journal of Applied Physics, vol. 133, 01/2023.
2024
Yapparov, R., T. Tak, J. Ewing, F. Wu, S. Nakamura, S. P. DenBaars, J. S. Speck, and S. Marcinkevičius, "Carrier Diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects", Applied Physics Letters, vol. 125, issue 3, 07/2024.
Quevedo, A., F. Wu, T-Y. Tsai, J. J. Ewing, T. Tak, S. Gandrothula, S. Gee, X. Li, S. Nakamura, S. P. DenBaars, et al., "Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes", Applied Physics Letters, vol. 125, issue 4, 07/2024.
Marcinkevičius, S., T. Tak, Y. Chao Chow, F. Wu, R. Yapparov, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Dynamics of carrier injection through V-defects in long wavelength GaN LEDs", Applied Physics Letters, vol. 124, issue 18, 04/2024.
Rebollo, S., T. Itoh, S. Krishnamoorthy, and J. S. Speck, "Heated-H3PO4 etching of (001) Beta-Ga2O3", Applied Physics Letters, vol. 125, issue 1, 07/2024.
Wong, M. S., E. S. Trageser, H. Zhang, H-M. Chang, S. Gee, T. Tak, S. Gandrothula, C. Lee, J. S. Speck, S. Nakamura, et al., "III-nitride m-plane violet narrow ridge edge-emitting laser diodes with sidewall passivation using atomic layer deposition", Optics Express, vol. 32, issue 12, 06/2024.
Wong, M. S., S. Gee, T. Tak, S. Gandrothula, S. Rebollo, NG. Cha, J. S. Speck, and S. P. DenBaars, "Optical Analysis of III-nitride micro-light-emitting diodes with different sidewall treatments at low current density operation", Japanese Journal of Applied Physics, vol. 63, issue 4, 04/2024.
Tak, T., A. Quevedo, F. Wu, S. Gandrothula, J. J. Ewing, S. Gee, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs", Applied Physics Letters, vol. 124, issue 17, 04/2024.
Ewing, J. J., F. Wu, A. Quevedo, T. Tak, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Pure edge-dislocation half-loops in low-temperature GaN for V-defect formation", Physical Review Applied, vol. 21, issue 6, 06/2024.

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