Publications

Found 220 results
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2020
Li, P., H. Zhang, H. Li, Y. Zhang, Y. Yao, N. Palmquist, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Metalorganic chemical vapor deposition grown n-InGaN/n-GaN tunnel junctions for micro-light-emitting diodes with very low forward voltage", Semiconductor Science and Technology, vol. 35, pp. 125023, oct, 2020.
Yuan, C., Y. Zhang, R. Montgomery, S. Kim, J. Shi, A. Mauze, T. Itoh, J. S. Speck, and S. Graham, "Modeling and analysis for thermal management in gallium oxide field-effect transistors", Journal of Applied Physics, vol. 127, pp. 154502, 2020.
Farzana, E., J. Wang, M. Monavarian, T. Itoh, K. S. Qwah, Z. J. Biegler, K. F. Jorgensen, and J. S. Speck, "Over 1 kV Vertical GaN-on-GaN p-n Diodes With Low On-Resistance Using Ammonia Molecular Beam Epitaxy", IEEE Electron Device Letters, vol. 41, pp. 1806-1809, 2020.
Li, P., H. Zhang, H. Li, M. Iza, Y. Yao, M. S. Wong, N. Palmquist, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition", Opt. Express, vol. 28, pp. 18707–18712, Jun, 2020.
Zollner, C. J., A. S. Almogbel, Y. Yao, M. Wang, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Superlattice hole injection layers for UV LEDs grown on SiC", Opt. Mater. Express, vol. 10, pp. 2171–2180, Sep, 2020.
Zhang, Y., A. Mauze, F. Alema, A. Osinsky, T. Itoh, and J. S. Speck, "β-Ga2O3 lateral transistors with high aspect ratio fin-shape channels", Japanese Journal of Applied Physics, vol. 60, pp. 014001, dec, 2020.
2021
Itoh, T., A. Mauze, Y. Zhang, and J. S. Speck, "Crystal growth on (110) β-Ga2O3 via plasma-assisted molecular beam epitaxy", Oxide-based Materials and Devices XII: International Society for Optics and Photonics, 2021.
Wang, J., B. K. Saifaddin, C. J. Zollner, B. Bonef, A. S. Almogbel, Y. Yao, M. Iza, Y. Zhang, M. N. Fireman, E. C. Young, et al., "High conductivity n-Al0.6Ga0.4N by ammonia-assisted molecular beam epitaxy for buried tunnel junctions in UV emitters", Opt. Express, vol. 29, pp. 40781–40794, Dec, 2021.
Li, P., A. David, H. Li, H. Zhang, C. Lynsky, Y. Yang, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "High-temperature electroluminescence properties of InGaN red 40 × 40 μm2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2\%", Applied Physics Letters, vol. 119, 12, 2021.
Li, P., H. Li, H. Zhang, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Metalorganic chemical vapor deposition-grown tunnel junctions for low forward voltage InGaN light-emitting diodes: epitaxy optimization and light extraction simulation", Semiconductor Science and Technology, vol. 36, pp. 035019, 02/2021.
Mauze, A., Y. Zhang, T. Itoh, T. E. Mates, H. Peelaers, C. G. Van de Walle, and J. S. Speck, "Mg doping and diffusion in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 130, 12, 2021.
Mauze, A., T. Itoh, Y. Zhang, and J. S. Speck, "Sn doping of [beta]-Ga2O3 grown by plasma-assisted molecular beam epitaxy", Oxide-based Materials and Devices XII: International Society for Optics and Photonics, 2021.
Montgomery, R. H., Y. Zhang, C. Yuan, S. Kim, J. Shi, T. Itoh, A. Mauze, S. Kumar, J. Speck, and S. Graham, "Thermal management strategies for gallium oxide vertical trench-fin MOSFETs", Journal of Applied Physics, vol. 129, pp. 085301, 2021.
Shi, J., A. Krishnan, A. F. M. Anha Bhuiyan, Y. Rui Koh, K. Huynh, A. Mauze, S. Mu, B. M. Foley, H. Ahmad, T. Itoh, et al., "Thermal Transport Across Al-(AlxGa1-x)2O3 and Al-Ga2O3 Interfaces", International Electronic Packaging Technical Conference and Exhibition, vol. ASME 2021 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, 10, 2021.
Farzana, E., F. Alema, W. Ying Ho, A. Mauze, T. Itoh, A. Osinsky, and J. S. Speck, "Vertical β-Ga2O3 Schottky diodes from metal-organic chemical vapor deposition with low on-resistance and high average breakdown field", Oxide-based Materials and Devices XII: International Society for Optics and Photonics, 2021.
2022
Mauze, A., T. Itoh, Y. Zhang, E. Deagueros, F. Wu, and J. S. Speck, "Coherently strained (001) β-(AlxGa1−x)2O3 thin films on β-Ga2O3: Growth and compositional analysis", Journal of Applied Physics, vol. 132, 09, 2022.
Li, P., H. Li, Y. Yang, H. Zhang, P. Shapturenka, M. Wong, C. Lynsky, M. Iza, M. J. Gordon, J. S. Speck, et al., "Demonstration of ultra-small 5 × 5 μm2 607 nm InGaN amber micro-light-emitting diodes with an external quantum efficiency over 2\%", Applied Physics Letters, vol. 120, 01, 2022.
Alema, F., T. Itoh, S. Vogt, J. S. Speck, and A. Osinsky, "Highly conductive epitaxial β-Ga2O3 and β-(AlxGa1−x)2O3 films by MOCVD", Japanese Journal of Applied Physics, vol. 61, pp. 100903, sep, 2022.
Ewing, J., C. Lynsky, J. Zhang, P. Shapturenka, M. Wong, J. Smith, M. Iza, J. S. Speck, and S. P. DenBaars, "Influence of Superlattice Structure on V-Defect Distribution, External Quantum Efficiency and Electroluminescence for Red InGaN Based µLEDs on Silicon", Crystals, vol. 12, pp. 1216, 2022.
Farzana, E., A. Bhattacharyya, N. S. Hendricks, T. Itoh, S. Krishnamoorthy, and J. S. Speck, "Oxidized metal Schottky contact with high-κ dielectric field plate for low-loss high-power vertical β-Ga2O3 Schottky diodes", APL Materials, vol. 10, 11, 2022.
Yao, Y., C. J. Zollner, M. Wang, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Polarization-Enhanced p-AlGaN Superlattice Optimization for GUV LED", IEEE Journal of Quantum Electronics, vol. 58, pp. 1-9, 2022.
Li, P., H. Li, M. S. Wong, P. Chan, Y. Yang, H. Zhang, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Progress of InGaN-Based Red Micro-Light Emitting Diodes", Crystals, vol. 12, pp. 541, 2022.
Li, P., H. Li, H. Zhang, Y. Yang, M. S. Wong, C. Lynsky, M. Iza, M. J. Gordon, J. S. Speck, S. Nakamura, et al., "Red InGaN micro-light-emitting diodes (\>620 nm) with a peak external quantum efficiency of 4.5\% using an epitaxial tunnel junction contact", Applied Physics Letters, vol. 120, 03, 2022.
Yao, Y., H. Li, P. Li, C. J. Zollner, M. Wang, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Size dependent characteristics of AlGaN-based deep ultraviolet micro-light-emitting-diodes", Applied Physics Express, vol. 15, pp. 064003, may, 2022.
Huynh, K., M. E. Liao, A. Mauze, T. Itoh, X. Yan, J. S. Speck, X. Pan, and M. S. Goorsky, "Surface reaction dependence of molecular beam epitaxy grown aluminum on various orientations of β-Ga2O3", APL Materials, vol. 10, 01, 2022.

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