Publications

Found 1586 results
Author [ Title(Desc)] Type Year
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 
X
Pei, Y., C. Poblenz, AL. Corrion, R. Chu, L. Shen, JS. Speck, and UK. Mishra, "X-and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE", Electronics Letters, vol. 44, no. 9: IET, pp. 598–598, 2008.
Wong, MH., DF. Brown, ML. Schuette, H. Kim, V. Balasubramanian, W. Lu, JS. Speck, and UK. Mishra, "X-band power performance of N-face GaN MIS-HEMTs", Electronics Letters, vol. 47, no. 3: IET Digital Library, pp. 214–215, 2011.
Nagata, T., O. Bierwagen, ME. White, MY. Tsai, Y. Yamashita, H. Yoshikawa, N. Ohashi, K. Kobayashi, T. Chikyow, and JS. Speck, "XPS study of Sb-/In-doping and surface pinning effects on the Fermi level in SnO 2 (101) thin films", Applied Physics Letters, vol. 98, no. 23: AIP, pp. 232107, 2011.
Z
Dora, Y., S. Han, D. Klenov, P. J. Hansen, K-soo. No, U. K. Mishra, S. Stemmer, and J. S. Speck, "ZrO 2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/ GaN transistors", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 24, no. 2: AVS, pp. 575–581, 2006.
Β
Kaun, S. W., F. Wu, J. S. Speck, and others, "β-(Al ${$sub x$}$ Ga ${$sub 1- x$}$)${$sub 2$}$ O ${$sub 3$}$/Ga ${$sub 2$}$ O ${$sub 3$}$(010) heterostructures grown on β-Ga ${$sub 2$}$ O ${$sub 3$}$(010) substrates by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, vol. 33, no. 4, 2015.
Kaun, S. W., F. Wu, and J. S. Speck, "β-(AlxGa1- x) 2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 33, no. 4: AVS, pp. 041508, 2015.
Tsai, M-Y., O. Bierwagen, M. E. White, and J. S. Speck, "β-Ga 2 O 3 growth by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 28, no. 2: AVS, pp. 354–359, 2010.
Farzana, E., F. Alema, T. Itoh, N. Hendricks, A. Mauze, A. Osinsky, and J. Speck, "β-Ga2O3 epitaxy and power devices from metal-organic chemical vapor deposition", Oxide-based Materials and Devices XIII: International Society for Optics and Photonics, 2022.
Zhang, Y., A. Mauze, F. Alema, A. Osinsky, T. Itoh, and J. S. Speck, "β-Ga2O3 lateral transistors with high aspect ratio fin-shape channels", Japanese Journal of Applied Physics, vol. 60, pp. 014001, dec, 2020.
Green, A. J., J. Speck, G. Xing, P. Moens, F. Allerstam, K. Gumaelius, T. Neyer, A. Arias-Purdue, V. Mehrotra, A. Kuramata, et al., "β-Gallium oxide power electronics", APL Materials, vol. 10, 02, 2022.
∑
Golan, Y., P. Fini, S. P. DenBaars, and J. Speck, "???????: ????∑??∑????∑???????= Inorganic materials 4 (271), 633-641, 1997-11-01", J. Eur. Ceram. Soc, vol. 12, pp. 123, 1993.

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