Publications

Found 1586 results
Author [ Title(Desc)] Type Year
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Z
Dora, Y., S. Han, D. Klenov, P. J. Hansen, K-soo. No, U. K. Mishra, S. Stemmer, and J. S. Speck, "ZrO 2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/ GaN transistors", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 24, no. 2: AVS, pp. 575–581, 2006.
Β
Kaun, S. W., F. Wu, J. S. Speck, and others, "β-(Al ${$sub x$}$ Ga ${$sub 1- x$}$)${$sub 2$}$ O ${$sub 3$}$/Ga ${$sub 2$}$ O ${$sub 3$}$(010) heterostructures grown on β-Ga ${$sub 2$}$ O ${$sub 3$}$(010) substrates by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, vol. 33, no. 4, 2015.
Kaun, S. W., F. Wu, and J. S. Speck, "β-(AlxGa1- x) 2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 33, no. 4: AVS, pp. 041508, 2015.
Tsai, M-Y., O. Bierwagen, M. E. White, and J. S. Speck, "β-Ga 2 O 3 growth by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 28, no. 2: AVS, pp. 354–359, 2010.
Farzana, E., F. Alema, T. Itoh, N. Hendricks, A. Mauze, A. Osinsky, and J. Speck, "β-Ga2O3 epitaxy and power devices from metal-organic chemical vapor deposition", Oxide-based Materials and Devices XIII: International Society for Optics and Photonics, 2022.
Zhang, Y., A. Mauze, F. Alema, A. Osinsky, T. Itoh, and J. S. Speck, "β-Ga2O3 lateral transistors with high aspect ratio fin-shape channels", Japanese Journal of Applied Physics, vol. 60, pp. 014001, dec, 2020.
Green, A. J., J. Speck, G. Xing, P. Moens, F. Allerstam, K. Gumaelius, T. Neyer, A. Arias-Purdue, V. Mehrotra, A. Kuramata, et al., "β-Gallium oxide power electronics", APL Materials, vol. 10, 02, 2022.

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