Publications

Found 1586 results
Author [ Title(Desc)] Type Year
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D
Wu, Y., JP. Zhang, GS. Cheng, M. Moskovits, and JS. Speck, "Defect Structure of Mg-Doped GaN Nanowires", Microscopy and Microanalysis, vol. 9, no. S02: Cambridge University Press, pp. 344–345, 2003.
Monavarian, M., J. Xu, M. Khoury, F. Wu, P. De Mierry, P. Vennéguès, M. A. Belkin, and J. S. Speck, "Defect Tolerance of Intersubband Transitions in Nonpolar $\mathrmGa\mathrmN/(\mathrmAl,\mathrmGa)\mathrmN$ Heterostructures: A Path toward Low-Cost and Scalable Mid- to Far-Infrared Optoelectronics", Phys. Rev. Appl., vol. 16, pp. 054040, Nov, 2021.
Hirai, A., BA. Haskell, MB. McLaurin, F. Wu, MC. Schmidt, KC. Kim, TJ. Baker, SP. DenBaars, S. Nakamura, and JS. Speck, "Defect-mediated surface morphology of nonpolar m-plane GaN", Applied physics letters, vol. 90, no. 12: AIP, pp. 121119, 2007.
Sasikumar, A., AR. Arehart, SW. Kaun, J. Chen, EX. Zhang, DM. Fleetwood, RD. Schrimpf, JS. Speck, and SA. Ringel, "Defects in GaN based transistors", Gallium Nitride Materials and Devices IX, vol. 8986: International Society for Optics and Photonics, pp. 89861C, 2014.
Jiang, R., X. Shen, J. Chen, GX. Duan, EX. Zhang, DM. Fleetwood, RD. Schrimpf, SW. Kaun, ECH. Kyle, JS. Speck, et al., "Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 109, no. 2: AIP Publishing, pp. 023511, 2016.
Asamizu, H., M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Demonstration of 426 nm InGaN/GaN laser diodes fabricated on free-standing semipolar (1122) gallium nitride substrates", Applied physics express, vol. 1, no. 9: IOP Publishing, pp. 091102, 2008.
Huang, C-Y., M. T. Hardy, K. Fujito, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Demonstration of 505 nm laser diodes using wavelength-stable semipolar (20 21) InGaN/GaN quantum wells", Applied Physics Letters, vol. 99, no. 24: AIP, pp. 241115, 2011.
Yonkee, B. P., E. C. Young, C. Lee, J. T. Leonard, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact", Optics express, vol. 24, no. 7: Optical Society of America, pp. 7816–7822, 2016.
Leonard, JT., EC. Young, BP. Yonkee, DA. Cohen, T. Margalith, SP. DenBaars, JS. Speck, and S. Nakamura, "Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact", Applied Physics Letters, vol. 107, no. 9: AIP Publishing, pp. 091105, 2015.
Hardy, M. T., P. Shan Hsu, I. L. Koslow, D. Feezell, S. Nakamura, J. S. Speck, and S. DenBaars, "Demonstration of a Relaxed Waveguide Semipolar (202Ø1) InGaN/GaN Laser Diode", CLEO: Science and Innovations: Optical Society of America, pp. CTu2N–2, 2012.
Hardy, M. T., P. S. Hsu, I. Koslow, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Demonstration of a relaxed waveguide semipolar InGaN/GaN laser diode", Lasers and Electro-Optics (CLEO), 2012 Conference on: IEEE, pp. 1–2, 2012.
Sharma, R., PM. Pattison, H. Masui, RM. Farrell, TJ. Baker, BA. Haskell, F. Wu, SP. DenBaars, JS. Speck, and S. Nakamura, "Demonstration of a semipolar (101¯3¯) In Ga N/ Ga N green light emitting diode", Applied Physics Letters, vol. 87, no. 23: AIP, pp. 231110, 2005.
Getty, A. R. K., A. David, Y. Wu, C. Weisbuch, and J. S. Speck, "Demonstration of distributed Bragg Reflectors for deep ultraviolet applications", Japanese Journal of Applied Physics, vol. 46, no. 8L: IOP Publishing, pp. L767, 2007.
Khoury, M., H. Li, H. Zhang, B. Bonef, M. S. Wong, F. Wu, D. Cohen, P. De Mierry, P. Vennéguès, J. S. Speck, et al., "Demonstration of Electrically Injected Semipolar Laser Diodes Grown on Low-Cost and Scalable Sapphire Substrates", ACS Applied Materials & Interfaces, vol. 11, pp. 47106-47111, 2019.
Abare, AC., M. Hansen, JS. Speck, LA. Coldren, and SP. DenBaars, "Demonstration of electrically pumped nitride distributed feedback lasers employing dielectric gratings", Device Research Conference Digest, 1999 57th Annual: IEEE, pp. 198–199, 1999.
Zhong, H., A. Tyagi, NN. Fellows, RB. Chung, M. Saito, K. Fujito, JS. Speck, SP. DenBaars, and S. Nakamura, "Demonstration of high power blue-green light emitting diode on semipolar (1122) bulk GaN substrate", Electronics Letters, vol. 43, no. 15: IET Digital Library, pp. 825–827, 2007.
Fireman, M. N., D. A. Browne, B. Mazumder, J. S. Speck, and U. K. Mishra, "Demonstration of isotype GaN/AlN/GaN heterobarrier diodes by NH3-molecular beam epitaxy", Applied Physics Letters, vol. 106, no. 20: AIP Publishing, pp. 202106, 2015.
Yeluri, R., C. A. Hurni, S. Chowdhury, J. S. Speck, and U. K. Mishra, "Demonstration of Low ON-Resistance CAVETS with Ammonia MBE Grown Active p-GaN Layer as the Current Blocking Layer for High Power Applications", Meeting Abstracts, no. 30: The Electrochemical Society, pp. 2531–2531, 2012.
Yonkee, B. P., R. M. Farrell, J. T. Leonard, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Demonstration of low resistance ohmic contacts to p-type (202Ø1Ø) GaN", Semiconductor Science and Technology, vol. 30, no. 7: IOP Publishing, pp. 075007, 2015.
Holder, C., D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers", Vertical-Cavity Surface-Emitting Lasers XVII, vol. 8639: International Society for Optics and Photonics, pp. 863906, 2013.
Holder, C., J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, "Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers", Applied Physics Express, vol. 5, no. 9: IOP Publishing, pp. 092104, 2012.
Schmidt, M. C., K-C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Demonstration of nonpolar m-plane InGaN/GaN laser diodes", Japanese journal of applied physics, vol. 46, no. 3L: IOP Publishing, pp. L190, 2007.
Chakraborty, A., B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, "Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates", Japanese journal of applied physics, vol. 44, no. 1L: IOP Publishing, pp. L173, 2005.
Kowsz, SJ., CD. Pynn, SH. Oh, RM. Farrell, JS. Speck, SP. DenBaars, and S. Nakamura, "Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells", Applied Physics Letters, vol. 107, no. 10: AIP Publishing, pp. 101104, 2015.
Hardy, M., C. O. Holder, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. DenBaars, "Demonstration of True Green ITO Clad Semipolar (202Ø1) InGaN/GaN Laser Diodes", CLEO: Science and Innovations: Optical Society of America, pp. CF1F–1, 2013.

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