Demonstration of isotype GaN/AlN/GaN heterobarrier diodes by NH3-molecular beam epitaxy

TitleDemonstration of isotype GaN/AlN/GaN heterobarrier diodes by NH3-molecular beam epitaxy
Publication TypeJournal Article
Year of Publication2015
AuthorsFireman, M. N., D. A. Browne, B. Mazumder, J. S. Speck, and U. K. Mishra
JournalApplied Physics Letters
Volume106
Pagination202106