| Title | Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors |
| Publication Type | Journal Article |
| Year of Publication | 2016 |
| Authors | Jiang, R., X. Shen, J. Chen, GX. Duan, EX. Zhang, DM. Fleetwood, RD. Schrimpf, SW. Kaun, ECH. Kyle, JS. Speck, and others |
| Journal | Applied Physics Letters |
| Volume | 109 |
| Pagination | 023511 |