| Title | Demonstration of 426 nm InGaN/GaN laser diodes fabricated on free-standing semipolar (1122) gallium nitride substrates |
| Publication Type | Journal Article |
| Year of Publication | 2008 |
| Authors | Asamizu, H., M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura |
| Journal | Applied physics express |
| Volume | 1 |
| Pagination | 091102 |