Publications

Found 673 results
Author Title Type [ Year(Asc)]
Filters: Author is Speck, James S  [Clear All Filters]
2011
Kaun, S. W., M. Hoi Wong, S. Dasgupta, S. Choi, R. Chung, U. K. Mishra, and J. S. Speck, "Device physics-024101 Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors", Applied Physics Express, vol. 4, no. 2, 2011.
Rangel, E., E. Matioli, Y-S. Choi, C. Weisbuch, J. S. Speck, and E. L. Hu, "Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes", Applied physics letters, vol. 98, no. 8: AIP, pp. 081104, 2011.
Miller, N., E. E. Haller, G. Koblmüller, C. Gallinat, J. S. Speck, W. J. Schaff, M. E. Hawkridge, K. Man Yu, and J. W. Ager III, "Effect of charged dislocation scattering on electrical and electrothermal transport in n-type InN", Physical Review B, vol. 84, no. 7: APS, pp. 075315, 2011.
Neufeld, C. J., S. C. Cruz, R. M. Farrell, M. Iza, J. R. Lang, S. Keller, S. Nakamura, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Effect of doping and polarization on carrier collection in InGaN quantum well solar cells", Applied Physics Letters, vol. 98, no. 24: AIP, pp. 243507, 2011.
Kaun, S. W., M. Hoi Wong, S. Dasgupta, S. Choi, R. Chung, U. K. Mishra, and J. S. Speck, "Effects of threading dislocation density on the gate leakage of AlGaN/GaN heterostructures for high electron mobility transistors", Applied physics express, vol. 4, no. 2: IOP Publishing, pp. 024101, 2011.
Mayer, M. A., S. Choi, O. Bierwagen, H. M. Smith III, E. E. Haller, J. S. Speck, and W. Walukiewicz, "Electrical and optical properties of p-type InN", Journal of Applied Physics, vol. 110, no. 12: AIP, pp. 123707, 2011.
Masui, H., H. Yamada, K. Iso, J. S. Speck, S. Nakamura, and S. P. DenBaars, Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporation, 2011.
Fujiwara, T., R. Yeluri, D. Denninghoff, J. Lu, S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors with+ 3 V of threshold voltage using Al2O3 deposited by atomic layer deposition", Applied physics express, vol. 4, no. 9: IOP Publishing, pp. 096501, 2011.
Singisetti, U., M. Hoi Wong, S. Dasgupta, J. S. Speck, and U. K. Mishra, "Enhancement-mode N-polar GaN metal–insulator–semiconductor field effect transistors with current gain cutoff frequency of 120 GHz", Applied physics express, vol. 4, no. 2: IOP Publishing, pp. 024103, 2011.
Singisetti, U., M. Hoi Wong, S. Dasgupta, B. Swenson, B. J. Thibeault, J. S. Speck, U. K. Mishra, and others, "Enhancement-mode N-polar GaN MISFETs with self-aligned source/drain regrowth", IEEE Electron Device Letters, vol. 32, no. 2: IEEE, pp. 137–139, 2011.
Dasgupta, S., A. Raman, J. S. Speck, U. K. Mishra, and others, "Experimental demonstration of III-nitride hot-electron transistor with GaN base", IEEE Electron Device Letters, vol. 32, no. 9: IEEE, pp. 1212–1214, 2011.
Hu, Y-L., S. Kraemer, P. T. Fini, and J. S. Speck, "Extended defect structure of a-plane GaN produced by sidewall lateral epitaxial overgrowth", Journal of Crystal Growth, vol. 331, no. 1: Elsevier, pp. 49–55, 2011.
Kamber, D. S., S. Pimputkar, M. Saito, S. P. DenBaars, J. S. Speck, and S. Nakamura, Group-iii nitride monocrystal with improved purity and method of producing the same, 2011.
Keller, S., Y. Dora, S. Chowdhury, F. Wu, X. Chen, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon", physica status solidi (c), vol. 8, no. 7-8: Wiley Online Library, pp. 2086–2088, 2011.
Haskell, B. A., M. D. Craven, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura, Growth of reduced dislocation density non-polar gallium nitride, 2011.
Dasgupta, S., S. Choi, F. Wu, J. S. Speck, U. K. Mishra, and others, "Growth, structural, and electrical characterizations of N-polar InAlN by plasma-assisted molecular beam epitaxy", Applied physics express, vol. 4, no. 4: IOP Publishing, pp. 045502, 2011.
Chung, R. B., F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Growth study and impurity characterization of AlxIn1- xN grown by metal organic chemical vapor deposition", Journal of Crystal Growth, vol. 324, no. 1: North-Holland, pp. 163–167, 2011.
Bierwagen, O., S. Choi, and J. S. Speck, "Hall and Seebeck profiling: Determining surface, interface, and bulk electron transport properties in unintentionally doped InN", Physical Review B, vol. 84, no. 23: APS, pp. 235302, 2011.
DenBaars, S. P., S. Nakamura, and J. S. Speck, High efficiency light emitting diode (LED), jun # " 7", 2011.
Zhao, Y., S. Tanaka, Q. Yan, C-Y. Huang, R. B. Chung, C-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, et al., "High optical polarization ratio from semipolar (20 2\= 1\=) blue-green InGaN/GaN light-emitting diodes", Applied physics letters, vol. 99, no. 5: AIP, pp. 051109, 2011.
Raring, J. W., M. C. Schmidt, C. Poblenz, B. Li, Y-C. Chang, M. J. Mondry, Y-. Da Lin, M. R. Krames, R. Craig, J. S. Speck, et al., "High-performance blue and green laser diodes based on nonpolar/semipolar bulk GaN substrates", Gallium Nitride Materials and Devices Vi, vol. 7939: International Society for Optics and Photonics, pp. 79390Y, 2011.
Schmidt, M. C., C. Poblenz, Y-C. Chang, B. Li, M. J. Mondry, J. Iveland, M. R. Krames, R. Craig, J. W. Raring, J. S. Speck, et al., "High-performance blue and green laser diodes based on nonpolar/semipolar GaN substrates", Laser Technology for Defense and Security VII, vol. 8039: International Society for Optics and Photonics, pp. 80390D, 2011.
Zhao, Y., S. Tanaka, C-C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High-power blue-violet semipolar (2021) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2", Applied physics express, vol. 4, no. 8: IOP Publishing, pp. 082104, 2011.
Rangel, E., E. Matioli, J. S. Speck, C. Weisbuch, and E. Hu, "Impact of the vertical layer structure on the emission directionality of thin-film InGaN photonic crystal LEDs", CLEO: Science and Innovations: Optical Society of America, pp. CMA3, 2011.
Huang, C-Y., Q. Yan, Y. Zhao, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Influence of Mg-doped barriers on semipolar (20 2\= 1) multiple-quantum-well green light-emitting diodes", Applied Physics Letters, vol. 99, no. 14: AIP, pp. 141114, 2011.

Pages