Publications

Found 909 results
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2011
Marchand, H., B. J. Moran, U. K. Mishra, and J. S. Speck, Method of controlling stress in group-iii nitride films deposited on substrates, 2011.
Arehart, AR., AC. Malonis, C. Poblenz, Y. Pei, JS. Speck, UK. Mishra, and SA. Ringel, "Next generation defect characterization in nitride HEMTs", physica status solidi (c), vol. 8, no. 7-8: Wiley Online Library, pp. 2242–2244, 2011.
Arehart, AR., AC. Malonis, C. Poblenz, Y. Pei, JS. Speck, UK. Mishra, and SA. Ringel, "Next generation defect characterization in nitride HEMTs", physica status solidi (c), vol. 8, no. 7-8: Wiley Online Library, pp. 2242–2244, 2011.
Craven, M. D., S. Keller, S. P. DenBaars, T. Margalith, J. Stephen Speck, S. Nakamura, and U. K. Mishra, Non-polar (Al, B, In, Ga) N quantum well and heterostructure materials and devices, 2011.
Craven, M. D., S. Keller, S. P. DenBaars, T. Margalith, J. Stephen Speck, S. Nakamura, and U. K. Mishra, Non-polar (Al, B, In, Ga) N quantum well and heterostructure materials and devices, 2011.
Rajan, S., C. Soo Suh, J. S. Speck, and U. K. Mishra, N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor, 2011.
Denninghoff, D., S. Dasgupta, J. Lu, D. Brown, S. Keller, J. Speck, and U. Mishra, "N-Polar GaN HEMTs Grown by MBE and MOCVD with fmax of 255 and 250 GHz, Respectively", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Denninghoff, DJ., S. Dasgupta, DF. Brown, S. Keller, J. Speck, and UK. Mishra, "N-polar GaN HEMTs with f max> 300 GHz using high-aspect-ratio T-gate design", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 269–270, 2011.
Denninghoff, D. J., S. Dasgupta, D. F. Brown, S. Keller, J. Speck, and U. K. Mishra, "N-polar GaN HEMTs with fmax>300 GHz using high-aspect-ratio T-gate design", 69th Device Research Conference, June, 2011.
Dasgupta, S., S. Keller, J. S. Speck, U. K. Mishra, and others, "N-Polar GaN/AlN MIS-HEMT With $ f_ ${$$\backslash$rm MAX$}$ $ of 204 GHz for Ka-Band Applications", IEEE Electron Device Letters, vol. 32, no. 12: IEEE, pp. 1683–1685, 2011.
Neufeld, C. J., S. C. Cruz, R. M. Farrell, M. Iza, S. Keller, S. Nakamura, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells", Applied Physics Letters, vol. 99, no. 7: AIP, pp. 071104, 2011.
Matioli, E., S. Brinkley, K. M. Kelchner, S. Nakamura, S. DenBaars, J. Speck, and C. Weisbuch, "Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals", Applied Physics Letters, vol. 98, no. 25: AIP, pp. 251112, 2011.
Dasgupta, S., DF. Brown, JS. Speck, UK. Mishra, and others, "Scaling behavior and velocity enhancement in self-aligned N-polar GaN/AlGaN HEMTs with maximum fT of 163 GHz", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 141–142, 2011.
Dasgupta, S., D. F. Brown, U. Singisetti, S. Keller, J. S. Speck, U. K. Mishra, and others, "Self-aligned technology for N-polar GaN/Al (Ga) N MIS-HEMTs", IEEE Electron Device Letters, vol. 32, no. 1: IEEE, pp. 33–35, 2011.
Farrell, R. M., D. A. Haeger, P. Shan Hsu, U. K. Mishra, S. P. DenBaars, J. S. Speck, and S. Nakamura, STRUCTURE AND METHOD FOR ACHIEVING SELECTIVE ETCHING IN (Ga, Al, In, B) N LASER DIODES, 2011.
Dasgupta, S., J. Lu, F. Wu, S. Keller, JS. Speck, UK. Mishra, and others, "Trap-related delay analysis of self-aligned N-polar GaN/InAlN HEMTs with record extrinsic g m of 1105 mS/mm", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 279–280, 2011.
Singisett, U., M. Hoi Wong, J. S. Speck, and U. K. Mishra, "Vertically scaled 5 nm GaN channel enhancement-mode N-polar GaN MOS-HFET with 560 mS/mm g m and 0.76 Ω-mm R on", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 1–2, 2011.
Toledo, N., C. Neufeld, M. Scarpulla, T. Buehl, S. Cruz, A. Gossard, S. DenBaars, J. Speck, and U. Mishra, "Wafer Bonded GaAs-Sapphire for Photovoltaic Applications via Adhesive Bonding", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Wong, MH., DF. Brown, ML. Schuette, H. Kim, V. Balasubramanian, W. Lu, JS. Speck, and UK. Mishra, "X-band power performance of N-face GaN MIS-HEMTs", Electronics Letters, vol. 47, no. 3: IET Digital Library, pp. 214–215, 2011.
2012
Sasikumar, A., A. Arehart, S. Kolluri, MH. Wong, S. Keller, SP. DenBaars, JS. Speck, UK. Mishra, and SA. Ringel, "Access-region defect spectroscopy of DC-stressed N-polar GaN MIS-HEMTs", IEEE Electron Device Letters, vol. 33, no. 5: IEEE, pp. 658–660, 2012.
Raman, A., C. A. Hurni, J. S. Speck, and U. K. Mishra, "AlGaN/GaN heterojunction bipolar transistors by ammonia molecular beam epitaxy", physica status solidi (a), vol. 209, no. 1: Wiley Online Library, pp. 216–220, 2012.
Wong, M. Hoi, U. Singisetti, J. Lu, J. S. Speck, and U. K. Mishra, "Anomalous output conductance in N-polar GaN high electron mobility transistors", IEEE Transactions on Electron Devices, vol. 59, no. 11: IEEE, pp. 2988–2995, 2012.
Mazumder, B., MH. Wong, CA. Hurni, JY. Zhang, UK. Mishra, and JS. Speck, "Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures", Applied Physics Letters, vol. 101, no. 9: AIP, pp. 091601, 2012.
Mazumder, B., MH. Wong, CA. Hurni, JY. Zhang, UK. Mishra, and JS. Speck, "Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures", Applied Physics Letters, vol. 101, no. 9: AIP, pp. 091601, 2012.
Choi, P-P., O. Cojocaru-Mirédin, D. Abou-Ras, R. Caballero, D. Raabe, V. S. Smentkowski, C. Gyung Park, G. Ho Gu, B. Mazumder, M. Hoi Wong, et al., "Atom probe tomography of compound semiconductors for photovoltaic and light-emitting device applications", Microscopy Today, vol. 20, no. 3: Cambridge University Press, pp. 18–24, 2012.

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