Self-aligned technology for N-polar GaN/Al (Ga) N MIS-HEMTs

TitleSelf-aligned technology for N-polar GaN/Al (Ga) N MIS-HEMTs
Publication TypeJournal Article
Year of Publication2011
AuthorsDasgupta, S., D. F. Brown, U. Singisetti, S. Keller, J. S. Speck, U. K. Mishra, and others
JournalIEEE Electron Device Letters
Volume32
Pagination33–35