| Title | Self-aligned technology for N-polar GaN/Al (Ga) N MIS-HEMTs |
| Publication Type | Journal Article |
| Year of Publication | 2011 |
| Authors | Dasgupta, S., D. F. Brown, U. Singisetti, S. Keller, J. S. Speck, U. K. Mishra, and others |
| Journal | IEEE Electron Device Letters |
| Volume | 32 |
| Pagination | 33–35 |