| Title | N-Polar GaN/AlN MIS-HEMT With $ f_ ${$$\backslash$rm MAX$}$ $ of 204 GHz for Ka-Band Applications |
| Publication Type | Journal Article |
| Year of Publication | 2011 |
| Authors | Dasgupta, S., S. Keller, J. S. Speck, U. K. Mishra, and others |
| Journal | IEEE Electron Device Letters |
| Volume | 32 |
| Pagination | 1683–1685 |