Trap-related delay analysis of self-aligned N-polar GaN/InAlN HEMTs with record extrinsic g m of 1105 mS/mm

TitleTrap-related delay analysis of self-aligned N-polar GaN/InAlN HEMTs with record extrinsic g m of 1105 mS/mm
Publication TypeConference Paper
Year of Publication2011
AuthorsDasgupta, S., J. Lu, F. Wu, S. Keller, JS. Speck, UK. Mishra, and others
Conference NameDevice Research Conference (DRC), 2011 69th Annual
PublisherIEEE