| Title | N-polar GaN HEMTs with f max> 300 GHz using high-aspect-ratio T-gate design |
| Publication Type | Conference Paper |
| Year of Publication | 2011 |
| Authors | Denninghoff, DJ., S. Dasgupta, DF. Brown, S. Keller, J. Speck, and UK. Mishra |
| Conference Name | Device Research Conference (DRC), 2011 69th Annual |
| Publisher | IEEE |