Publications

Found 33 results
Author Title Type [ Year(Asc)]
Filters: Author is Speck, J  [Clear All Filters]
2017
Rigutti, L., B. Bonef, J. Speck, F. Tang, and RA. Oliver, "Atom probe tomography of nitride semiconductors", Scripta Materialia: Pergamon, 2017.
Sun, W., Z. Zhang, T. Mohsin, E. Farzana, B. McSkimming, C. Lee, P. Saunier, J. Speck, SA. Ringel, and AR. Arehart, GENERAL MODEL FOR IRRADIATION-INDUCED DEGRADATION OF GaN HEMTS, 2017.
Forman, C., J. Leonard, B. Yonkee, C. Pynn, T. Mates, D. Cohen, R. Farrell, T. Margalith, S. DenBaars, J. Speck, et al., "Semipolar (202Ø1) III-Nitride P-Down LEDs with in situ anneal to reduce the Mg memory effect", Journal of Crystal Growth, vol. 464: North-Holland, pp. 197–200, 2017.
2014
Iveland, J., J. Speck, L. Martinelli, J. Peretti, and C. Weisbuch, "Auger effect identified as main cause of efficiency droop in leds", SPIE Newsroom, pp. 1–4, 2014.
Pimputkar, S., S. Kawabata, J. Speck, and S. Nakamura, "MS94. O06", Acta Cryst, vol. 70, pp. C1416, 2014.
2011
Simeonov, D., MY. Tsai, HT. Chen, C. Weisbuch, and J. Speck, "Bonding of nitride based LEDs on tin oxide templates for advanced optoelectronic devices", Electronics Letters, vol. 47, no. 9: IET, pp. 556–558, 2011.
Denninghoff, DJ., S. Dasgupta, DF. Brown, S. Keller, J. Speck, and UK. Mishra, "N-polar GaN HEMTs with f max> 300 GHz using high-aspect-ratio T-gate design", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 269–270, 2011.
2010
Yang, CK., P. Roblin, F. De Groote, SA. Ringel, S. Rajan, JP. Teyssier, C. Poblenz, Y. Pei, J. Speck, and UK. Mishra, "Linear and Nonlinear Device Modeling-Pulsed-IV Pulsed-RF Cold-FET Parasitic Extraction of Biased AlGaN/GaN HEMTs Using Large Signal Network Analyzer", IEEE Transactions on Microwave Theory and Techniques, vol. 58, no. 5, pp. 1077, 2010.
Miller, N., JW. Ager III, HM. Smith III, KM. Yu, EE. Haller, W. Walukiewicz, WJ. Schaff, C. Gallinat, J. Speck, and others, "Thermopower of parallel conducting structures", APS March Meeting Abstracts, 2010.
2008
Hol\`y, V., T. Baumbach, D. Lübbert, L. Helfen, M. Ellyan, P. Mikulík, S. Keller, SP. DenBaars, and J. Speck, "Diffuse x-ray scattering from statistically inhomogeneous distributions of threading dislocations beyond the ergodic hypothesis", Physical Review B, vol. 77, no. 9: American Physical Society, pp. 094102, 2008.
2007
Pei, Y., C. Suh, R. Chu, F. Recht, L. Shen, A. Corrion, C. Poblenz, J. Speck, and UK. Mishra, "AlGaN/GaNHEMT with High PAE and Breakdown Voltage Grown by Ammonia MBE", Device Research Conference, 2007 65th Annual: IEEE, pp. 129–130, 2007.
Kröger, R., T. Paskova, A. Rosenauer, D. Hommel, B. Monemar, P. Fini, B. Haskell, J. Speck, and S. Nakamura, "On the Mechanism of Dislocation and Stacking Fault Formation in a-plane GaN Films Grown by Hydride Vapor Phase Epitaxy", AIP Conference Proceedings, vol. 893, no. 1: AIP, pp. 341–342, 2007.
2005
Yu, H., L. McCarthy, S. Rajan, S. Keller, S. DenBaars, J. Speck, and U. Mishra, "Ion implanted AlGaN-GaN HEMTs with nonalloyed ohmic contacts", IEEE electron device letters, vol. 26, no. 5: IEEE, pp. 283–285, 2005.
Ueda, O., H. Amano, S. Fujita, K. Kishino, K. Hiramatsu, M. Kawasaki, S. Chichibu, S. Niki, H. Hirayama, J. Speck, et al., Selected topics in applied physics III-Physics of UV materials and devices and their applications: JAPAN SOC APPLIED PHYSICS KUDAN-KITA BUILDING 5TH FLOOR, 1-12-3 KUDAN-KITA, CHIYODA-KU, TOKYO, 102-0073, JAPAN, 2005.
2003
Ambacher, O., M. Eickhoff, A. Link, M. Hermann, M. Stutzmann, F. Bernardini, V. Fiorentini, Y. Smorchkova, J. Speck, U. Mishra, et al., "Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures", physica status solidi (c), no. 6: WILEY-VCH Verlag, pp. 1878–1907, 2003.
Fiorentini, V., Y. Smorchkova, J. Speck, U. Mishra, W. Schaff, V. Tilak, and LF. Eastman, "Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures Part A: Polarization and pyroelectronics", Group III-nitrides and Their Heterostructures: Growth, Characterization and Applications: John Wiley & Sons Inc, pp. 1878, 2003.
DenBaars, SP., T. Katona, P. Cantu, A. Hanlon, S. Keller, M. Schmidt, T. Margalith, M. Pattisson, C. Moe, J. Speck, et al., "GaN based high brightness LEDs and UV LEDs", Electron Devices Meeting, 2003. IEDM'03 Technical Digest. IEEE International: IEEE, pp. 16–1, 2003.
2002
Jimnez, A., D. Buttari, D. Jena, R. Coffie, S. Heikman, NQ. Zhang, L. Shen, E. Calleja, E. Munoz, J. Speck, et al., "Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs", IEEE Electron Device Letters, vol. 23, no. 6: IEEE, pp. 306–308, 2002.
McCarthy, LS., IP. Smorchkova, P. Fini, MJW. Rodwell, J. Speck, SP. DenBaars, and UK. Mishra, "Small signal RF performance of AlGaN/GaN heterojunction bipolar transistors", Electronics Letters, vol. 38, no. 3: IET Digital Library, pp. 144–145, 2002.
Amano, H., E. Calleja, J. Christen, M. Kamp, P. Lefebvre, J. Speck, and T. Suski, Special issue: Containing papers presented at the European Materials Research Society (E-MRS) 2001, Spring Meeting, Symposium H: GaN and Related Compounds, Strasbourg, France, June 4-8 2001-Preface: ELSEVIER SCIENCE SA PO BOX 564, 1001 LAUSANNE, SWITZERLAND, 2002.
Link, A., T. Graf, O. Ambacher, A. Jimenez, E. Calleja, Y. Smorchkova, J. Speck, U. Mishra, and M. Stutzmann, "Transport properties of 2DEGs in AlGaN/GaN heterostructures: Spin splitting and occupation of higher subbands", physica status solidi (b), vol. 234, no. 3: WILEY-VCH Verlag Berlin, pp. 805–809, 2002.
2001
McCarthy, L., I. Smorchkova, H. Xing, P. Fini, S. Keller, J. Speck, SP. DenBaars, MJW. Rodwell, and UK. Mishra, "Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors", Applied Physics Letters, vol. 78, no. 15: AIP, pp. 2235–2237, 2001.
Amano, H., E. Calleja, J. Christen, M. Kamp, P. Lefebvre, J. Speck, and T. Suski, "European Materials Research Society(E-MRS)(2001), Spring Meeting, Symposium H: GaN and Related Compounds", Materials Science and Engineering B(Switzerland), no. 1, pp. 245, 2001.
Link, A., T. Graf, R. Dimitrov, O. Ambacher, M. Stutzmann, Y. Smorchkova, U. Mishra, and J. Speck, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2)-Two-dimensional electron gas properties-Transport", Physica Status Solidi-B-Basic Research, vol. 228, no. 2: Berlin: Akademie-Verlag, 1971-, pp. 603–606, 2001.
Xing, H., DS. Green, L. McCarthy, IP. Smorchkova, P. Chavarkar, T. Mates, S. Keller, S. DenBaars, J. Speck, and U. K. Mishra, "Progress in gallium nitride-based bipolar transistors", Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001: IEEE, pp. 125–130, 2001.

Pages