Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs

TitleEffect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs
Publication TypeJournal Article
Year of Publication2002
AuthorsJimnez, A., D. Buttari, D. Jena, R. Coffie, S. Heikman, NQ. Zhang, L. Shen, E. Calleja, E. Munoz, J. Speck, and others
JournalIEEE Electron Device Letters
Volume23
Pagination306–308