| Title | Access-region defect spectroscopy of DC-stressed N-polar GaN MIS-HEMTs |
| Publication Type | Journal Article |
| Year of Publication | 2012 |
| Authors | Sasikumar, A., A. Arehart, S. Kolluri, MH. Wong, S. Keller, SP. DenBaars, JS. Speck, UK. Mishra, and SA. Ringel |
| Journal | IEEE Electron Device Letters |
| Volume | 33 |
| Pagination | 658–660 |