| Title | N-polar GaN HEMTs with fmax>300 GHz using high-aspect-ratio T-gate design |
| Publication Type | Conference Paper |
| Year of Publication | 2011 |
| Authors | Denninghoff, D. J., S. Dasgupta, D. F. Brown, S. Keller, J. Speck, and U. K. Mishra |
| Conference Name | 69th Device Research Conference |
| Date Published | June |
| Keywords | Epitaxial growth, gallium compounds, Gallium nitride, GaN, high electron mobility transistors, high-aspect-ratio T-gate design, III-V semiconductors, Logic gates, MOCVD, MOCVD-grown N-polar GaN HEMT, Radio frequency |
| DOI | 10.1109/DRC.2011.5994527 |
