Publications
"Crystal growth on (110) β-Ga2O3 via plasma-assisted molecular beam epitaxy", Oxide-based Materials and Devices XII: International Society for Optics and Photonics, 2021.
, "N-polar GaN HEMTs with fmax>300 GHz using high-aspect-ratio T-gate design", 69th Device Research Conference, June, 2011.
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