Publications

Found 2 results
Author Title Type [ Year(Asc)]
Filters: Keyword is high electron mobility transistors  [Clear All Filters]
2018
Jiang, R., X. Shen, J. Fang, P. Wang, E. X. Zhang, J. Chen, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, et al., "Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs", IEEE Transactions on Device and Materials Reliability, vol. 18, pp. 364-376, Sept, 2018.
2011
Denninghoff, D. J., S. Dasgupta, D. F. Brown, S. Keller, J. Speck, and U. K. Mishra, "N-polar GaN HEMTs with fmax>300 GHz using high-aspect-ratio T-gate design", 69th Device Research Conference, June, 2011.