| Title | Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs |
| Publication Type | Journal Article |
| Year of Publication | 2018 |
| Authors | Jiang, R., X. Shen, J. Fang, P. Wang, E. X. Zhang, J. Chen, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, J. S. Speck, and S. T. Pantelides |
| Journal | IEEE Transactions on Device and Materials Reliability |
| Volume | 18 |
| Pagination | 364-376 |
| Date Published | Sept |
| ISSN | 1530-4388 |
| Keywords | 1/fnoise, acceptor-like traps, AlGaN-GaN, AlGaN/GaN, aluminium compounds, defect buildup, Degradation, dehydrogenation, donor-like traps, drain bias dependences, electric noise measurement, gallium compounds, gate bias dependence, HEMT, HEMTs, high electron mobility transistors, high field stress, hot carrier, hot carrier degradation, III-V semiconductors, Logic gates, Low-frequency noise measurements, MODFETs, oxygen impurity centers, Stress, Substrates, Temperature, Temperature measurement, threshold voltage shifts, transconductance degradation, wide band gap semiconductors, worst-case stressing bias condition |
| DOI | 10.1109/TDMR.2018.2847338 |
