Publications

Found 2 results
Author Title Type [ Year(Asc)]
Filters: Author is S. Keller  [Clear All Filters]
2011
Denninghoff, D. J., S. Dasgupta, D. F. Brown, S. Keller, J. Speck, and U. K. Mishra, "N-polar GaN HEMTs with fmax>300 GHz using high-aspect-ratio T-gate design", 69th Device Research Conference, June, 2011.
1998
Fini, P., X. Wu, E. J. Tarsa, Y. Golan, V. Srikant, S. Keller, S. P. Denbaars, and J. S. Speck, "The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor Deposition", Japanese Journal of Applied Physics, vol. 37, pp. 4460, 1998.